丝印：CSD16323；Package：VSON-CLIP；CSD16323Q3 N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in

文件：482.7 Kbytes 页数：12 Pages

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德州仪器

N-Channel NexFET??Power MOSFETs

文件：392.94 Kbytes 页数：12 Pages

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德州仪器

N-Channel 30 V (D-S) MOSFET

文件：1.77564 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

采用 3mm x 3mm SON 封装的单路、5.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET

This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications. • Optimized for 5-V Gate Drive\n• Low Thermal Resistance\n• Lead-Free Terminal Plating\n• Halogen Free\n• APPLICATIONS \n• Optimized for Control or Synchronous FET Applications\n \n All other trademarks are the property of their respective owners;

TI

德州仪器

丝印：CSD16323；Package：VSON-CLIP；CSD16323Q3 N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5-V Gate Drive • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point-of-Load Synchronous Buck Converter for Applications in

文件：482.7 Kbytes 页数：12 Pages

TI

德州仪器

N-Channel NexFET??Power MOSFETs

文件：387.04 Kbytes 页数：10 Pages

TI

德州仪器

双路 Cool N 通道 NexFET 功率 MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.\n ·DualCool™ Package\n·Optimized for 5V Gate Drive\n ·Ultra Low Qg and Qgd\n ·Low Thermal Resistance\n ·Avalanche Rated\n ·Pb Free Terminal Plating\n ·RoHS Compliant\n ·Halogen Free\n ·SON 3.3-mm × 3.3-mm Plastic Package\n·APPLICATIONS ·Point-of-Load Synchronous Buck Converter for Applications in Netw;

TI

德州仪器