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CSD16340Q3

丝印:CSD16340;Package:VSON-CLIP;CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Resistance Rated at VGS =2.5 V • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point of Load Synchronous Buc

文件:336.24 Kbytes 页数:13 Pages

TI

德州仪器

CSD16340Q3

N-Channel NexFET??Power MOSFETs

文件:241.89 Kbytes 页数:9 Pages

TI

德州仪器

CSD16340Q3

CSD16340Q3 25-V N-Channel NexFET??Power MOSFET

文件:280.87 Kbytes 页数:14 Pages

TI

德州仪器

CSD16340Q3

采用 3mm x 3mm SON 封装的单路、5.5mΩ、25V、N 沟道 NexFET™ 功率 MOSFET

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications. • Optimized for 5 V Gate Drive\n• Resistance Rated at VGS =2.5 V\n• Ultra-Low Qg and Qgd\n• Low Thermal Resistance\n• Avalanche Rated\n• Pb Free Terminal Plating\n• RoHS Compliant\n• Halogen Free\n• SON 3.3-mm × 3.3-mm Plastic Package\n• APPLICATIONS \n• Point of Load Synchronous Buck Converter for ;

TI

德州仪器

CSD16340Q3.B

丝印:CSD16340;Package:VSON-CLIP;CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Resistance Rated at VGS =2.5 V • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point of Load Synchronous Buc

文件:336.24 Kbytes 页数:13 Pages

TI

德州仪器

CSD16340Q3T

丝印:CSD16340;Package:VSON-CLIP;CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Resistance Rated at VGS =2.5 V • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point of Load Synchronous Buc

文件:336.24 Kbytes 页数:13 Pages

TI

德州仪器

CSD16340Q3T.B

丝印:CSD16340;Package:VSON-CLIP;CSD16340Q3 25-V N-Channel NexFET™ Power MOSFET

1 Features 1• Optimized for 5 V Gate Drive • Resistance Rated at VGS =2.5 V • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.3-mm × 3.3-mm Plastic Package 2 Applications • Point of Load Synchronous Buc

文件:336.24 Kbytes 页数:13 Pages

TI

德州仪器

CSD16340Q3_11

The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

文件:392.49 Kbytes 页数:11 Pages

TI

德州仪器

CSD16340Q3_16

CSD16340Q3 25-V N-Channel NexFET??Power MOSFET

文件:280.87 Kbytes 页数:14 Pages

TI

德州仪器

CSD16340Q3T

CSD16340Q3 25-V N-Channel NexFET??Power MOSFET

文件:280.87 Kbytes 页数:14 Pages

TI

德州仪器

技术参数

  • Configuration:

    Single

  • Rds(on) max at VGS=4.5 V (mOhms):

    5.5

  • IDM - pulsed drain current (Max) (A):

    115

  • QG typ (nC):

    6.5

  • QGD typ (nC):

    1.2

  • Package (mm):

    SON3x3

  • VGS (V):

    10

  • VGSTH typ (V):

    0.85

  • ID - silicon limited at Tc=25degC (A):

    21

  • ID - package limited (A):

    60

  • Logic level:

    Yes

供应商型号品牌批号封装库存备注价格
TI
SON8
56371
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
TI/德州仪器
22+
SON8
93000
原装正品
询价
TI
2450+
SON8
6541
只做原装正品假一赔十为客户做到零风险!!
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TI
2016+
SON8
10000
只做原装,假一罚十,公司可开17%增值税发票!
询价
TI
24+
SON8
5630
TI一级代理原厂授权渠道实单支持
询价
TI/德州仪器
23+
SON8
18204
原装正品代理渠道价格优势
询价
TI/德州仪器
21+
VSON8
8026
原装正品 值得信赖
询价
TI
20+
SON8
1837
全新原装公司现货
询价
TI/德州仪器
15+
SON8
1180
原装正品 可含税交易
询价
TI/德州仪器
24+
SON8
25
只做原厂渠道 可追溯货源
询价
更多CSD16340Q3供应商 更新时间2025-10-4 14:02:00