CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

文件：1.23074 Mbytes 页数：16 Pages

TI

德州仪器

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

文件：1.23074 Mbytes 页数：16 Pages

TI

德州仪器

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

文件：1.23074 Mbytes 页数：16 Pages

TI

德州仪器

12-V N-Channel FemtoFET MOSFET

文件：947.86 Kbytes 页数：14 Pages

TI

德州仪器

CSD13385F5 12-V N-Channel FemtoFET™ MOSFET

1 Features • Low on resistance • Low Qg and Qgd • Ultra-small footprint – 1.53 mm × 0.77 mm • Low profile – 0.36-mm height • Integrated ESD protection diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and halogen free • RoHS compliant 2 Applications • Optimized for industrial load

文件：1.23074 Mbytes 页数：16 Pages

TI

德州仪器