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CSD1306

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

文件:76.29 Kbytes 页数:3 Pages

CDIL

CSD1306D

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

文件:76.29 Kbytes 页数:3 Pages

CDIL

CSD1306E

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

文件:76.29 Kbytes 页数:3 Pages

CDIL

CSD1306F

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR EPITAXIAL TRANSISTOR SOT-23 Formed SMD Package

文件:76.29 Kbytes 页数:3 Pages

CDIL

CSD13202Q2

丝印:1322;Package:WSON;CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

文件:865.9 Kbytes 页数:12 Pages

TI

德州仪器

CSD13202Q2.B

丝印:1322;Package:WSON;CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

文件:865.9 Kbytes 页数:12 Pages

TI

德州仪器

CSD13202Q2G4.B

丝印:1322;Package:WSON;CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs

1 Features • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2-mm × 2-mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for

文件:865.9 Kbytes 页数:12 Pages

TI

德州仪器

CSD13302W

丝印:302;Package:DSBGA;CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件:548.23 Kbytes 页数:11 Pages

TI

德州仪器

CSD13302W.B

丝印:302;Package:DSBGA;CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件:548.23 Kbytes 页数:11 Pages

TI

德州仪器

CSD13302WT

丝印:302;Package:DSBGA;CSD13302W 12 V N Channel NexFET™ Power MOSFET

1 Features 1• Ultra Low On Resistance • Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62 mm Height • Pb Free • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 14.6 mΩ, 12 V, N-Channel device is

文件:548.23 Kbytes 页数:11 Pages

TI

德州仪器

技术参数

  • Configuration:

    Single

  • Rds(on) max at VGS=4.5 V (mOhms):

    5.5

  • IDM - pulsed drain current (Max) (A):

    115

  • QG typ (nC):

    6.5

  • QGD typ (nC):

    1.2

  • Package (mm):

    SON3x3

  • VGS (V):

    10

  • VGSTH typ (V):

    0.85

  • ID - silicon limited at Tc=25degC (A):

    21

  • ID - package limited (A):

    60

  • Logic level:

    Yes

供应商型号品牌批号封装库存备注价格
TI/德州仪器
22+
SON8
93000
原装正品
询价
TI
2450+
SON8
6541
只做原装正品假一赔十为客户做到零风险!!
询价
TI
2016+
SON8
10000
只做原装,假一罚十,公司可开17%增值税发票!
询价
TI
24+
SON8
5630
TI一级代理原厂授权渠道实单支持
询价
TI/德州仪器
23+
SON8
18204
原装正品代理渠道价格优势
询价
TI/德州仪器
21+
VSON8
8026
原装正品 值得信赖
询价
TI
20+
SON8
1837
全新原装公司现货
询价
TI/德州仪器
15+
SON8
1180
原装正品 可含税交易
询价
TI
23+
(DQG)-8
30000
全新原装正品
询价
TI/德州仪器
2152+
SON-8
8000
原装正品现货假一罚十
询价
更多CSD供应商 更新时间2026-3-12 15:18:00