丝印：C3D08065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：1.10268 Mbytes 页数：6 Pages

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丝印：C3D08065I；Package：IsolatedTO-220-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Ceramic Package Provides 2.5kV Isolation • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Electrically Isolated Package • Essentially No Swit

文件：1.04342 Mbytes 页数：6 Pages

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丝印：C3D08065；Package：TO-252-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：1.10268 Mbytes 页数：6 Pages

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丝印：C3D08065I；Package：IsolatedTO-220-2；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Ceramic Package Provides 2.5kV Isolation • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Electrically Isolated Package • Essentially No Swit

文件：1.04342 Mbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：544.13 Kbytes 页数：6 Pages

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Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：291.41 Kbytes 页数：2 Pages

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3rd Generation 650 V, 8 A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.97855 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode

文件：856.33 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：1.11022 Mbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：509.12 Kbytes 页数：6 Pages

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