丝印：C3D16065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：1.05807 Mbytes 页数：6 Pages

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丝印：C3D16065D1；Package：TO-247-3；Silicon Carbide Schottky Diode

Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Applications • Switch Mode Power Supplies (S

文件：728.54 Kbytes 页数：6 Pages

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丝印：C3D16065D1；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：728.61 Kbytes 页数：6 Pages

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丝印：C3D16065；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：1.05807 Mbytes 页数：6 Pages

WOLFSPEED

丝印：C3D16065D1；Package：TO-247-3；Silicon Carbide Schottky Diode

Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Applications • Switch Mode Power Supplies (S

文件：728.54 Kbytes 页数：6 Pages

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科锐

丝印：C3D16065D1；Package：TO-247-3；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 650 Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Recti

文件：728.61 Kbytes 页数：6 Pages

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3rd Generation 650 V, 16A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.75353 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode

文件：850.9 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：1.03795 Mbytes 页数：6 Pages

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