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BLV20

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange

文件:81.8 Kbytes 页数:11 Pages

PHI

PHI

PHI

BLV20

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 12 dB at 8.0 W/175 MHz • Omnigold™ Metalization System

文件:18.86 Kbytes 页数:1 Pages

ASI

BLV20

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange enve

文件:111.71 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV2042

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal in

文件:109.41 Kbytes 页数:16 Pages

PHI

PHI

PHI

BLV2044

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

文件:101.36 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLV2045N

UHF power transistor

DESCRIPTION NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and ou

文件:75.59 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLV2046

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

文件:128.06 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLV2047

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

文件:84.07 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLV20

VHF power transistor

DESCRIPTION\nN-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.\nIt has a 3/8\" flange enve

恩XP

恩XP

BLV20

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI BLV20 is Designed for Class C, 28 V High Band Applications up to 175 MHz.FEATURES:\n• Common Emitter\n• PG = 12 dB at 8.0 W/175 MHz\n• Omnigold™ Metalization System

ASI Semiconductor

ASI Semiconductor

晶体管资料

  • 型号:

    BLV20

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    甚高频 (VHF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    65V

  • 最大电流允许值:

    0.9A

  • 最大工作频率:

    175MHZ

  • 引脚数:

    4

  • 可代换的型号:

  • 最大耗散功率:

    8W

  • 放大倍数:

  • 图片代号:

    G-266

  • vtest:

    65

  • htest:

    175000000

  • atest:

    0.9

  • wtest:

    8

详细参数

  • 型号:

    BLV20

  • 功能描述:

    射频双极电源晶体管 RF Transistor

  • RoHS:

  • 制造商:

    M/A-COM Technology Solutions

  • 配置:

    Single 直流集电极/Base Gain hfe

  • Min:

    40

  • 最大工作频率:

    30 MHz 集电极—发射极最大电压

  • VCEO:

    25 V 发射极 - 基极电压

  • VEBO:

    4 V

  • 集电极连续电流:

    20 A

  • 功率耗散:

    250 W

  • 封装/箱体:

    Case 211-11

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
PHI
2019+
SMD
6992
原厂渠道 可含税出货
询价
MOT
24+
580
询价
PHI
23+
TO-59
220
专营高频管模块,全新原装!
询价
ASI
16+
NA
8800
原装现货,货真价优
询价
FREESCALE
24+
TO-59
100
价格优势
询价
MOTOROLA/摩托罗拉
25+
TO-59r
1200
全新原装现货,价格优势
询价
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势
询价
PHI
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
PHI
23+
高频管
7300
专注配单,只做原装进口现货
询价
ASI
1224
5
优势货源原装正品
询价
更多BLV20供应商 更新时间2026-4-17 13:31:00