UHF push-pull power transistor

DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transist

文件：109.21 Kbytes 页数：16 Pages

PHI

PHI

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, b

文件：86.27 Kbytes 页数：12 Pages

PHI

PHI

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, b

文件：86.27 Kbytes 页数：12 Pages

PHI

PHI

UHF push-pull power transistor

恩XP

UHF power transistors

恩XP