UHF power transistor

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8 flange env

文件：80.71 Kbytes 页数：11 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 15 W/175 MHz • Omnigold™ Metalization System

文件：18.68 Kbytes 页数：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 10 dB at 15 W/175 MHz • Omnigold™ Metalization System

文件：50.97 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated HF and VHF transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Features: It has a 3/8 f

文件：36.89 Kbytes 页数：1 Pages

ELEFLOW

VHF power transistor

NJS