UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting

文件：70.55 Kbytes 页数：10 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain

文件：27.44 Kbytes 页数：1 Pages

ASI

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting

文件：133.72 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

Description: NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. Features: ∗ Emitter-ballastin

文件：43.25 Kbytes 页数：1 Pages

ELEFLOW

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting

文件：133.72 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting

文件：70.55 Kbytes 页数：10 Pages

PHI

飞利浦

UHF power transistor

恩XP

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor