| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BLV99 | UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting 文件：70.55 Kbytes 页数：10 Pages | PHI PHI | PHI | |
BLV99 | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV99 is a Common Emitter Device Designed for Amplifier Applications up to 860 MHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • High Gain 文件：27.44 Kbytes 页数：1 Pages | ASI | ASI | |
BLV99 | UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting 文件：133.72 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BLV99 | UHF power transistor Description: NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. Features: ∗ Emitter-ballastin 文件：43.25 Kbytes 页数：1 Pages | ELEFLOW | ELEFLOW | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting 文件：133.72 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | ||
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. FEATURES • Emitter-ballasting 文件：70.55 Kbytes 页数：10 Pages | PHI PHI | PHI | ||
BLV99 | UHF power transistor | 恩XP | 恩XP | |
BLV99 | NPN SILICON RF POWER TRANSISTOR | ASI Semiconductor | ASI Semiconductor |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
超高频/特高频 （UHF）_TR_输出极 （E）
- 封装形式：
贴片封装
- 极限工作电压：
50V
- 最大电流允许值：
0.2A
- 最大工作频率：
900MHZ
- 引脚数：
4
- 可代换的型号：
BLX91,
- 最大耗散功率：
2W
- 放大倍数：
- 图片代号：
G-56
- vtest：
50
- htest：
900000000
- atest：
0.2
- wtest：
2
详细参数
- 型号：
BLV99
- 制造商：
ASI
- 制造商全称：
ASI
- 功能描述：
NPN SILICON RF POWER TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
PH |
23+ |
高频管 |
250 |
专营高频管模块,全新原装! |
询价 | ||
PH |
24+ |
580 |
询价 | ||||
PHL |
24+ |
SMD |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
PHI |
25+ |
2789 |
全新原装自家现货!价格优势! |
询价 | |||
PHI |
24+ |
TO-59 |
344 |
价格优势 |
询价 | ||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
PHI |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
恩XP |
2023+ |
SMD |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
PHI |
23+ |
高频管 |
7300 |
专注配单,只做原装进口现货 |
询价 |
