VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a

文件：86.25 Kbytes 页数：15 Pages

PHI

飞利浦

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW60C is Designed for 12.5 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 5.0 dB at 45 W/175 MHz • Omnigold™ Metalization System

文件：37.47 Kbytes 页数：1 Pages

ASI

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a

文件：101.86 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 16V 9A 4-Pin CRPM

NJS