UHF power transistor

文件：56.94 Kbytes 页数：11 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

文件：95.77 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power transistor

恩XP

恩智浦

UHF power transistor

DESCRIPTION\nNPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.FEATURES\n• Internal input matching to achieve high power gain and easy de • Internal input matching to achieve high power gain and easy design of wideband circuits\n• Emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.;

恩XP

恩智浦