UHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum

文件：63.91 Kbytes 页数：11 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES •

文件：75.69 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES •

文件：85.54 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power transistor

恩XP

UHF power transistor

恩XP

UHF power transistor

恩XP