UHF push-p띠 I power transistor

FEATURES • Double internal input matching for easy matching and high gain • Emitter-ballasting resistors for an optimum temperature profile • Gold metallizatlon ensures excellent reliability. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended

文件：3.86601 Mbytes 页数：12 Pages

PHI

PHI

UHF push-pull powertransistor

FEATURES Double internal input matching for easy matching and high gain Emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base station transmitters in the 900 to 960 MHz range. DESCRIPTION Two NPN silicon pla

文件：469.7 Kbytes 页数：12 Pages

PHI

PHI

UHF power transistor

DESCRIPTION NPN silicon planar transistor intended for common emitter class-AB operation. The transistor has internal input and output matching by means of MOS capacitors. The encapsulation is a SOT273A flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Inte

文件：107.89 Kbytes 页数：12 Pages

PHI

PHI

UHF push-pull power transistor

文件：150.74 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

恩XP

UHF push-pull power transistor

NJS

新泽西半导体