UHF push-p띠 I power transistor

FEATURES • Double internal input matching for easy matching and high gain • Emitter-ballasting resistors for an optimum temperature profile • Gold metallizatlon ensures excellent reliability. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended

文件：3.86601 Mbytes 页数：12 Pages

PHI

飞利浦

UHF push-pull powertransistor

FEATURES Double internal input matching for easy matching and high gain Emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base station transmitters in the 900 to 960 MHz range. DESCRIPTION Two NPN silicon pla

文件：469.7 Kbytes 页数：12 Pages

PHI

飞利浦

Guards against accidental disconnection of Computers, PDU’s, Servers and most Network Devices.

文件：5.42821 Mbytes 页数：7 Pages

BURLAND

NPN TRANSISTOR

AF OUTPUT AMPLIFIER

文件：80.09 Kbytes 页数：1 Pages

STANSON

司坦森