UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES

文件：65.96 Kbytes 页数：11 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES

文件：65.96 Kbytes 页数：11 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES

文件：151.86 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

恩XP

Trans GP BJT NPN 27V 3A 6-Pin CDFM

NJS