HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are a

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PHI

PHI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW86 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Common Emitter • PG = 7.0 dB at 40 W/175 MHz • Omnigold™ Metalization System

文件：18.38 Kbytes 页数：1 Pages

ASI

HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are a

文件：126.14 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated HF and VHF transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Features: It has a 3/8

文件：44.65 Kbytes 页数：1 Pages

ELEFLOW

Trans GP BJT NPN 36V 4A 4-Pin SOT-123A

NJS

新泽西半导体