UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. FEATURES • Emitter ballasting resist

文件：108.63 Kbytes 页数：14 Pages

PHI

PHI

UHF power transistor

恩XP

SMD Switching Diode

Features - Low forward voltage: VF=0.9V (Typ.) - Fast reverse recovery time: trr=1.6nS (Typ.)

文件：49.08 Kbytes 页数：2 Pages

COMCHIP

典琦

SMD Switching Diode

文件：68.96 Kbytes 页数：2 Pages

COMCHIP

典琦

Wedge Base

文件：32.02 Kbytes 页数：1 Pages

VCC