UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. FEATURES •

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PHI

PHI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz. FEATURES: • Common Emitter • PG = 10 dB at 150 W/860 MHz • Omnigold™ Metalization System

文件：18.79 Kbytes 页数：1 Pages

ASI

UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. FEATURES • Double i

文件：95.38 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF linear push-pull power transistor

DESCRIPTION\nNPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.FEATURES\n• Double inte • Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transm;

恩XP

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz.FEATURES:\n• Common Emitter\n• PG = 10 dB at 150 W/860 MHz\n• Omnigold™ Metalization System

ASI Semiconductor

UHF linear push-pull power transistor

DESCRIPTION\nNPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.FEATURES\n• Double inter • Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transm;

NJS