BLV859

UHF linear push-pull power transistor

DESCRIPTION NPNsiliconplanartransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT262B4-leadrectangularflangepackage,withtwoceramiccaps.ItdeliversaPosync=20Winclass-Aoperationat860MHzandasupplyvoltageof25V. FEATURES •

PHI

BLV859

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TheASIBLV859isDesignedforTelevisionBandIV&VApplicationsupto860MHz. FEATURES: •CommonEmitter •PG=10dBat150W/860MHz •Omnigold™MetalizationSystem

BLV859

UHF linear push-pull power transistor

DESCRIPTION NPNsiliconplanartransistorwithtwosectionsinpush-pullconfiguration.ThedeviceisencapsulatedinaSOT262B4-leadrectangularflangepackage,withtwoceramiccapsItdeliversaPosync=20Winclass-Aoperationat860MHzandasupplyvoltageof25V. FEATURES •Doublei

BLV859

UHF linear push-pull power transistor; • Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. ;

DESCRIPTION\nNPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.FEATURES\n• Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.

恩XP

BLV859

NPN SILICON RF POWER TRANSISTOR;

DESCRIPTION:\nThe ASI BLV859 is Designed for Television Band IV & V Applications up to 860 MHz.FEATURES:\n• Common Emitter\n• PG = 10 dB at 150 W/860 MHz\n• Omnigold™ Metalization System

ETC

BLV859

UHF linear push-pull power transistor; • Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band. ;

DESCRIPTION\nNPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.FEATURES\n• Double internal input and output matching for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.APPLICATION\n• Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.