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BLV4N60

N-channel Enhancement Mode Power MOSFET

文件:495.83 Kbytes 页数:6 Pages

BELLING

上海贝岭

BLV4N60

N-channel Enhancement Mode Power MOSFET

文件:385.18 Kbytes 页数:6 Pages

ESTEK

伊泰克电子

BLV4N60

N-channel Enhancement Mode Power MOSFET

Belling

上海贝岭

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:124.46 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

MGP4N60E

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件:120.94 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP4N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

文件:146.13 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    BLV4N60

  • 制造商:

    ESTEK

  • 制造商全称:

    ESTEK

  • 功能描述:

    N-channel Enhancement Mode Power MOSFET

供应商型号品牌批号封装库存备注价格
BL
20+
TO22OF
32970
原装优势主营型号-可开原型号增税票
询价
BL
23+
TO22OF
50000
全新原装正品现货,支持订货
询价
BL
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
B
22+
TO-220
6000
十年配单,只做原装
询价
BL
0732+
TO220
948
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
原装正品
23+
TO-220
18724
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
BL
2023+
TO-220
5800
进口原装,现货热卖
询价
BL
25+
TO-220
10000
全新原装现货库存
询价
BELLING/上海贝岭
25+
90000
全新原装现货
询价
BELING/上海贝岭
23+
TO220F
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多BLV4N60供应商 更新时间2026-4-18 14:14:00