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BLV11

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply

文件:81.89 Kbytes 页数:11 Pages

PHI

PHI

PHI

BLV11

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLV11is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz FEATURES INCLUDE: • PG= 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold™ Metalization System

文件:25.93 Kbytes 页数:1 Pages

ASI

BLV11

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: BLV11 is Designed for Class C, 12.5 Volt operation in FM Amplifier Applications up to 250 MHz. FEATURES INCLUDE: • PG = 9.0 dB Typical at 175 MHz • Emitter Ballasting • Omnigold™ Metalization System

文件:80.28 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV11

VHF power transistor

Description: N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, HF and VHF transmitters with a nominal supply voltage of 13.5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-v

文件:38.27 Kbytes 页数:1 Pages

ELEFLOW

BLV11

VHF power transistor

DESCRIPTION\nN-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over

恩XP

恩XP

BLV11

VHF power transistor

NJS

NJS

BLV11

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

ASI Semiconductor

晶体管资料

  • 型号:

    BLV11

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    甚高频 (VHF)_功率放大 (L)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    36V

  • 最大电流允许值:

    3A

  • 最大工作频率:

    175MHZ

  • 引脚数:

    4

  • 可代换的型号:

    MRF221,MRF222,MRF223,

  • 最大耗散功率:

    15W

  • 放大倍数:

  • 图片代号:

    G-266

  • vtest:

    36

  • htest:

    175000000

  • atest:

    3

  • wtest:

    15

详细参数

  • 型号:

    BLV11

  • 功能描述:

    射频双极电源晶体管 RF Transistor

  • RoHS:

  • 制造商:

    M/A-COM Technology Solutions

  • 配置:

    Single 直流集电极/Base Gain hfe

  • Min:

    40

  • 最大工作频率:

    30 MHz 集电极—发射极最大电压

  • VCEO:

    25 V 发射极 - 基极电压

  • VEBO:

    4 V

  • 集电极连续电流:

    20 A

  • 功率耗散:

    250 W

  • 封装/箱体:

    Case 211-11

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
PHI
2019+
SMD
6992
原厂渠道 可含税出货
询价
PHI
23+
1688
房间现货库存:QQ:373621633
询价
MOTOROLA/摩托罗拉
2025+
TO-59
4000
原装进口价格优 请找坤融电子!
询价
MOT
24+
580
询价
PHI
23+
TO-59
750
专营高频管模块,全新原装!
询价
PHI
24+
SMD
5000
只做原装公司现货
询价
PHI
18+
SOT123
85600
保证进口原装可开17%增值税发票
询价
PHI
24+
224
现货供应
询价
PHI
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
询价
PHI
25+
TO-59
1200
全新原装现货,价格优势
询价
更多BLV11供应商 更新时间2026-1-17 10:21:00