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BF1100WR

Dual-gate MOS-FET

DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Special

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BF1100WR

Dual-gate MOS-FET

FEATURES Speciallydesignedforuseat9to12Vsupplyvoltage Shortchanneltransistorwithhighforwardtransfer admittancetoinputcapacitanceratio Lownoisegaincontrolledamplifierupto1GHz Superiorcross-modulationperformanceduringAGC. APPLICATIONS VHFandUHFappl

ETC

ETC

BF1101

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BF1101R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BF1101WR

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BF1102

Dual N-channel dual gate MOS-FET

DESCRIPTION TheBF1102andBF1102RarebothtwoequaldualgateMOS-FETswhichhaveasharedsourcepinandasharedgate2pin.Bothdeviceshaveinterconnectedsourceandsubstrate;aninternalbiascircuitenablesDCstabilizationandaverygoodcross-modulationperformanceat5Vsupplyvolt

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BF1102

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

ETC

BF1102(R)

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

ETC

BF1102R

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

ETC

BF1105

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

技术参数

  • 输出电压(V):

    可调 

  • 输出电流(A):

    可调 

  • 功率(W):

    36W 

  • 封装形式:

    SOT23-5 

供应商型号品牌批号封装库存备注价格
BYD
2016+
SOT23-5
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
BYD
2430+
SOT23-5
8540
只做原装正品假一赔十为客户做到零风险!!
询价
INFINEON
23+
SOT-143
7936
询价
Infineon
24+
SOT-143
3600
绝对原装!现货热卖!
询价
INFINEON
24+
SOT-143SOT-23-4
21200
新进库存/原装
询价
INFINEON
24+
SOT-143
15000
原装现货假一罚十
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
BYD
24+
SMD
30000
询价
CHINAXYJ
23+
SMD
9868
专做原装正品,假一罚百!
询价
INFINEO
21+
SOT143
12588
原装正品,自己库存 假一罚十
询价
更多BF1供应商 更新时间2025-7-29 22:58:00