零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
Dual-gate MOS-FET DESCRIPTION Enhancementtypefield-effecttransistorinaplasticmicrominiatureSOT343Rpackage.ThetransistorconsistsofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. FEATURES •Special | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI | ||
Dual-gate MOS-FET FEATURES Speciallydesignedforuseat9to12Vsupplyvoltage Shortchanneltransistorwithhighforwardtransfer admittancetoinputcapacitanceratio Lownoisegaincontrolledamplifierupto1GHz Superiorcross-modulationperformanceduringAGC. APPLICATIONS VHFandUHFappl | ETC | ETC | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1101,BF1101RandBF1101WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI | ||
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1102andBF1102RarebothtwoequaldualgateMOS-FETswhichhaveasharedsourcepinandasharedgate2pin.Bothdeviceshaveinterconnectedsourceandsubstrate;aninternalbiascircuitenablesDCstabilizationandaverygoodcross-modulationperformanceat5Vsupplyvolt | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | ETC | ETC | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | ETC | ETC | ||
RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | ETC | ETC | ||
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka | PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | PHI |
技术参数
- 输出电压(V):
可调
- 输出电流(A):
可调
- 功率(W):
36W
- 封装形式:
SOT23-5
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
BYD |
2016+ |
SOT23-5 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
BYD |
2430+ |
SOT23-5 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
INFINEON |
23+ |
SOT-143 |
7936 |
询价 | |||
Infineon |
24+ |
SOT-143 |
3600 |
绝对原装!现货热卖! |
询价 | ||
INFINEON |
24+ |
SOT-143SOT-23-4 |
21200 |
新进库存/原装 |
询价 | ||
INFINEON |
24+ |
SOT-143 |
15000 |
原装现货假一罚十 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
BYD |
24+ |
SMD |
30000 |
询价 | |||
CHINAXYJ |
23+ |
SMD |
9868 |
专做原装正品,假一罚百! |
询价 | ||
INFINEO |
21+ |
SOT143 |
12588 |
原装正品,自己库存 假一罚十 |
询价 |
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