BF1102中文资料飞利浦数据手册PDF规格书

DESCRIPTION

The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package.

FEATURES

• Two low noise gain controlled amplifiers in a single

package

• Specially designed for 5 V applications

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance

ratio.

APPLICATIONS

Gain controlled low noise amplifier for VHF and UHF

applications such as television tuners and professional

communications equipment.