DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES

• Specially designed for use at 9 to 12 V supply voltage

• Short channel transistor with high forward transfer admittance to input capacitance ratio

• Low noise gain controlled amplifier up to 1 GHz

• Superior cross-modulation performance during AGC.

APPLICATIONS

• VHF and UHF applications such as television tuners and professional communications equipment.

BF1100属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的BF1100晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。