N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

PHI

N-channel dual-gate MOS-FETs

文件：399.37 Kbytes 页数：15 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT343R package. \n\n•High transfer admittance to input capacitance ratio\n\n•Integrated diodes between gates and source\n\n•Low noise\n\n•Source and substrate interconnected;

恩XP

Single Color Right Angle Type (3.0 X 2.0 mm)

Features Product features • Outer Dimension 3.0 x 2.0 x 1.0mm ( L x W x H ) • Temperature range Storage Temperature : -40℃～ 100℃ Operating Temperature : -30℃～ 85℃ • Lead–free soldering compatible • RoHS compliant

文件：367.08 Kbytes 页数：21 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.

Single Color Right Angle Type (3.0 X 2.0 mm)

文件：410.93 Kbytes 页数：21 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.

Single Color Right Angle Type (3.0 X 2.0 mm)

文件：410.93 Kbytes 页数：21 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.