N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：131.09 Kbytes 页数：15 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel dual gate Field-Effect Transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. Encap \n\n•Excellent low frequency noise performance\n\n•High transfer admittance to input capacitance ratio\n\n•Low noise gain controlled amplifier\n\n•Partly internal self-biasing circuit to ensure good cross-modulation performance;

恩XP

THIS SPECIFICATION DEFINES THE ELECTRICAL AND MECHANICAL CHARACTERISTICS OF THE DC BRUSHLESS AXIAL FLOW FAN.

文件：927.37 Kbytes 页数：8 Pages

DELTA

台达电子

THIS SPECIFICATION DEFINES THE ELECTRICAL AND MECHANICAL CHARACTERISTICS OF THE DC BRUSHLESS AXIAL FLOW FAN.

文件：341.81 Kbytes 页数：6 Pages

DELTA

台达电子

THIS SPECIFICATION DEFINES THE ELECTRICAL AND MECHANICAL CHARACTERISTICS OF THE DC BRUSHLESS AXIAL FLOW FAN.

文件：561.91 Kbytes 页数：8 Pages

DELTA

台达电子