FEATURES

 Specially designed for use at 9 to 12 V supply voltage

 Short channel transistor with high forward transfer

admittance to input capacitance ratio

 Low noise gain controlled amplifier up to 1 GHz

 Superior cross-modulation performance during AGC.

APPLICATIONS

 VHF and UHF applications such as television tuners and

professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic

microminiature SOT343R package. The transistor

consists of an amplifier MOS-FET with source and

substrate interconnected and an internal bias circuit to

ensure good cross-modulation performance during AGC.

BF1100WR属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的BF1100WR晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。