N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

PHI

N-channel dual-gate MOS-FETs

文件：399.37 Kbytes 页数：15 Pages

恩XP

N-channel dual-gate MOS-FETs

文件：399.37 Kbytes 页数：15 Pages

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：128.13 Kbytes 页数：16 Pages

PHI

PHI

Single Color Right Angle Type (3.0 X 2.0 mm)

Features Product features • Outer Dimension 3.0 x 2.0 x 1.0mm ( L x W x H ) • Temperature range Storage Temperature : -40℃～ 100℃ Operating Temperature : -30℃～ 85℃ • Lead–free soldering compatible • RoHS compliant

文件：367.08 Kbytes 页数：21 Pages

STANLEY

STANLEY ELECTRIC CO.,LTD.