Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

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PHI

飞利浦

Silicon RF switches

General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate o

文件：72.05 Kbytes 页数：10 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Silicon RF switches

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor and band-switching diode in a SOT143B package. Drain and source are interchangeable\nIntegrated diodes between gate and source and between gate and drain;

恩XP

恩智浦