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零件型号	下载订购	功能描述	制造商上传企业	LOGO
BF1105	文件：152.37 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka	PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦	PHI
BF1105	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	ETC	ETC
BF1105	文件：300 bytes Page：1 Pages	N-channel dual-gate MOS-FETs;	恩XP	恩XP
BF1105R	文件：300 bytes Page：1 Pages	N-channel dual-gate MOSFET; \n\n•High forward transfer admittance to input capacitance ratio\n\n•Internal self-biasing circuit to ensure good cross-modulation performance\n\n•Low noise gain controlled amplifier up to 1 GHz\n\n\n; Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel Field-Effect Transistor.\n	恩XP	恩XP
BF1105R	文件：152.37 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka	PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦	PHI
BF1105R	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	ETC	ETC
BF1105WR	文件：152.37 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka	PHIPhilips Semiconductors 飞利浦荷兰皇家飞利浦	PHI
BF1105WR	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	ETC	ETC
BF1105WR	文件：300 bytes Page：1 Pages	N-channel dual-gate MOSFET; \n\n•High forward transfer admittance to input capacitance ratio\n\n•Internal self-biasing circuit to ensure good cross-modulation performance\n\n•Low noise gain controlled amplifier up to 1 GHz\n\n\n; Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel Field-Effect Transistor.\n	恩XP	恩XP
BF1105_15	文件：125.1 Kbytes Page：16 Pages	N-channel dual-gate MOS-FETs	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司	JMNIC

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	BF1105	恩XP	25+	SOT-143	20300	NXP/恩智浦原装特价BF1105即刻询购立享优惠#长期有货	询价
深圳市弘为电子有限公司	BF1105	PHI	24+	原厂封装	87000	原装现货假一罚十	询价
千层芯半导体(深圳)有限公司	BF1105	恩XP	24+	SOT-143	25000	一级专营品牌全新原装热卖	询价
深圳市振宏微科技有限公司	BF1105	SOT-143	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳兆威电子有限公司	BF1105	INFINEON/	23+	SOT-143	63000	原装正品现货	询价
深圳市胜彬电子有限公司	BF1105	恩XP	22+	SOT143	8000	原装正品支持实单	询价
深圳市威雅利发展有限公司	BF1105	PHI	06+	SOT-143	3000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市安罗世纪电子有限公司	BF1105	恩XP	2023+	SMD	6000	安罗世纪电子只做原装正品货	询价
深圳深宇韬电子科技有限公司	BF1105	PHI	2023+	SOT-143	8800	正品渠道现货终端可提供BOM表配单。	询价
深圳市顺鑫晟科技有限公司	BF1105	恩XP	25+	SOT143	188600	全新原厂原装正品现货欢迎咨询	询价

更多BF1105供应商更新时间2025-7-29 16:33:00

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