Dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Special

文件：146.38 Kbytes 页数：14 Pages

PHI

PHI

Dual-gate MOS-FET

FEATURES  Specially designed for use at 9 to 12 V supply voltage  Short channel transistor with high forward transfer admittance to input capacitance ratio  Low noise gain controlled amplifier up to 1 GHz  Superior cross-modulation performance during AGC. APPLICATIONS  VHF and UHF appl

文件：471.96 Kbytes 页数：16 Pages

恩XP

Dual-gate MOS-FET

文件：106.65 Kbytes 页数：14 Pages

JMNIC

锦美电子

Dual-gate MOS-FET

文件：106.65 Kbytes 页数：14 Pages

JMNIC

锦美电子

Dual-gate MOS-FET

恩XP