Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：159.54 Kbytes 页数：14 Pages

PHI

PHI

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：311.53 Kbytes 页数：15 Pages

恩XP

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

文件：77.09 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

文件：123.5 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

文件：214.51 Kbytes 页数：3 Pages

MOSPEC

统懋