Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：159.54 Kbytes 页数：14 Pages

PHI

PHI

Dual-gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Sp

文件：311.53 Kbytes 页数：15 Pages

恩XP

Dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES • Special

文件：146.38 Kbytes 页数：14 Pages

PHI

PHI

PoE Upgradable Outdoor Housing

文件：297.97 Kbytes 页数：3 Pages

LVL1