P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD409 is Pb-free (meets

文件：185.12 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel MOSFET uses advanced trench technology

Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-35A,RDS(ON)

文件：1.3486 Mbytes 页数：4 Pages

DOINGTER

杜因特

P-Channel Enhancement Mode Field Effect Transistor

文件：243 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc P-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：319.6 Kbytes 页数：2 Pages

ISC

无锡固电