| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AOD410 | N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD410usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.AOD410L(GreenProduct)isofferedinalead-freepackage. Features VDS(V)=30V ID=8A RDS( | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | |
AOD410 | N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
AOD410 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
AOD410 | N-Channel Enhancement Mode Field Effect Transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | |
N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4100usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasaHighsideswitchinCPUcorepowerconversion. -RoHSCompliant -HalogenFree* Features VDS(V)= | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4102/AOI4102usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications. ProductSummary VDS30V I | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=19A@TC=25℃ •DrainSourceVoltage- :VDSS=30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=37mΩ(Max) •100avalanchetested •MinimumLot-to-Lot | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel MOSFET uses advanced trench technology Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=19A,RDS(ON) | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4104usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),shoot-throughimmunityandbodydiodecharacteristics.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion. -RoHSCompliant -HalogenFree* Features VDS(V)=2 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.4mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel Enhancement Mode Field Effect Transistor GeneralDescription TheAOD4106usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.ThisdeviceissuitableforuseasalowsideswitchinSMPSandgeneralpurposeapplications.StandardProductAOD4106isPb-free(meetsROHS&Sony259specifications).AOD4106Lis | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
30V N-Channel MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30V N-Channel MOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-Channel Enhancement Mode Field Effect Transistor | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
包装：散装 类别：开关 按钮开关 描述：PUSHBUTTON 30MM | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
包装：散装 类别：开关 按钮开关 描述：PUSHBUTTON 30MM | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
包装：散装 类别：开关 按钮开关 描述：PUSHBUTTON 30MM | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
CeleronMProcessoron65nmProcess | IntelIntel Corporation（Integrated Electronics Corporation) 英特尔英特尔（集成电子公司） | Intel | ||
DetectableBuriedBarricadeTapes400Series | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | 3M |
详细参数
- 型号：
AOD410
- 功能描述：
N-Channel Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALPHA |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
AO |
23+ |
TO-252 |
700000 |
公主请下单 柒号只做原装 |
询价 | ||
AOS/万代 |
TO252 |
7906200 |
询价 | ||||
ALPHA |
360000 |
原厂原装 |
1305 |
询价 | |||
AO |
2017+ |
TO252 |
42500 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
AO/ALPHA&OMEGA |
2008++ |
TO-252 |
103700 |
新进库存/原装 |
询价 | ||
Aos |
2339+ |
TO-252 |
5650 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
AOS |
24+ |
SOT-252 |
5000 |
全现原装公司现货 |
询价 | ||
AO |
2020+ |
SOT252 |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
AOS |
2018+ |
TO252 |
6528 |
只做原装正品假一赔十!只要网上有上百分百有库存放心 |
询价 |
相关规格书
更多- AOD4100
- AOD4102_10
- AOD4106
- AOD410N-B
- AOD410N-R
- AOD4110
- AOD411N-G
- AOD411N-R-ENGRAVED
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- AOD4120_08
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- AOD436L
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- AOD448L
- AOD4504
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相关库存
更多- AOD4102
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- AOD410N-Y
- AOD411N-B
- AOD411N-R
- AOD411N-Y
- AOD4120
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- AOD4128
- AOD412L
- AOD4130
- AOD4136
- AOD413L
- AOD413YL
- AOD4140
- AOD4144
- AOD414L
- AOD4158P
- AOD417_08
- AOD4180
- AOD4184
- AOD4184A
- AOD4185
- AOD4187
- AOD419
- AOD420
- AOD420L
- AOD420N-G
- AOD420N-Y
- AOD421_08
- AOD422L
- AOD425
- AOD434
- AOD436
- AOD438
- AOD442
- AOD444
- AOD4454
- AOD446_08
- AOD448
- AOD450
- AOD450L
- AOD452A
