丝印：80N；LOW NOISE 150mA LDO REGULATOR

FEATURES • Supply Current Typ. 36μA • Standby Mode Typ. 0.1μA • Dropout Voltage Typ. 0.21V (IOUT=150mA, VOUT=

文件：566.79 Kbytes 页数：33 Pages

NISSHINBO

日清纺微电子

丝印：80N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：485.82 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：416.34 Kbytes 页数：7 Pages

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丝印：80N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =80A RDS(ON)

文件：200.1 Kbytes 页数：6 Pages

RECTRON

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丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：276.1 Kbytes 页数：7 Pages

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丝印：80N150；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =150V,ID =80A RDS(ON)

文件：276.58 Kbytes 页数：7 Pages

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丝印：80N30；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,I D = 81A RDS(ON)

文件：270.15 Kbytes 页数：6 Pages

RECTRON

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丝印：80N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =80A RDS(ON)

文件：323.36 Kbytes 页数：7 Pages

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丝印：80N60；Package：DFN5X6-8L；N-Channel Super Trench Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：402.83 Kbytes 页数：8 Pages

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丝印：80N60；Package：TO-252-2L；Enhancement Mode Power MOSFET

General Features VDS =60V,ID =80A RDS(ON)

文件：330.27 Kbytes 页数：7 Pages

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