丝印：80N03；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description Th e TF80P03 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimi

文件：3.79402 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：80N03；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：402.26 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：80N03；Package：TO-252；N-Ch Enhancement Mode Power MOSFET

文件：401.84 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：994.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：1.00146 Mbytes 页数：7 Pages

VBSEMI

微碧半导体