丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：416.34 Kbytes 页数：7 Pages

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丽正国际

丝印：80N100；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =100V,ID =80A RDS(ON)

文件：200.1 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：80N100；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

General Features VDS =100V,ID =80A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V Excellent gate charge x RDS(on) product(FOM) Very low on-resistance RDS(on) 175 °C operating temperature Pb-free lead plating 100% UIS tested

文件：276.1 Kbytes 页数：7 Pages

RECTRON

丽正国际