丝印：80N3LL；Package：DPAK；N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

文件：778.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

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丝印：80N3LLH6；Package：PowerFLAT5x6；N-channel 30 V, 0.0046, 21 A PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6t

文件：874.85 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体