丝印：80R600；Package：PG-SOT223；800VCoolMOSªP7PowerTransistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApplications •Fullyoptimizedportfolio Benefits •Best-in-classperform

文件：1.029859 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600；Package：PG-SOT223；800V CoolMOS짧 P7 Power Transistor

文件：1.03023 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：ThinPAK5x6SMD；MOSFET 800V CoolMOS짧 P7 Power Device

1 The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. Features • Best-in-class FOM RDS(on

文件：1.77661 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

文件：933.94 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：PG-TO252-3；800V CoolMOS짧 P7 Power Transistor

文件：963.45 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：PG-TO220-3；800V CoolMOS짧 P7 Power Transistor

文件：958.03 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：952.89 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R600P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：1.21966 Mbytes 页数：13 Pages

Infineon

英飞凌