型号：IPN80R900P7；Package：PG-SOT223；800V CoolMOS짧 P7 Power Transistor

文件：1.04375 Mbytes 页数：13 Pages

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型号：IPLK80R900P7；Package：SMD；800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

文件：1.80053 Mbytes 页数：13 Pages

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型号：MMD80R900QZRH；Package：TO-252-2L；800V 0.90Ω N-channel MOSFET

 Description MMD80R900QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.27233 Mbytes 页数：10 Pages

型号：IPA80R900P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

文件：940.98 Kbytes 页数：13 Pages

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型号：IPD80R900P7；Package：PG-TO252-3；800V CoolMOS짧 P7 Power Transistor

文件：967.7 Kbytes 页数：13 Pages

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型号：IPP80R900P7；Package：PG-TO220-3；800V CoolMOS짧 P7 Power Transistor

文件：962.18 Kbytes 页数：13 Pages

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型号：IPS80R900P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：958.17 Kbytes 页数：13 Pages

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型号：IPU80R900P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：1.22384 Mbytes 页数：13 Pages

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型号：MMF80R900PBTH；Package：TO-220F；800V 0.9ohm N-channel MOSFET

文件：1.53439 Mbytes 页数：10 Pages