丝印：80N3LL；Package：DPAK；N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

文件：778.69 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道30 V、2 mOhm典型值、120 A STripFET H6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET with very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

Pigtailed PD for analog application

文件：250.67 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Pigtailed PD for analog application

文件：250.67 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Pigtailed PD for analog application

文件：250.67 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商