丝印：80R1K4P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K4P7；Package：ThinPAK5x6SMD；800V CoolMOS짧 P7 Power Device

MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

文件：1.80902 Mbytes 页数：13 Pages

INFINEON

英飞凌

800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌