丝印：80N450K6；Package：DPAK；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MO

文件：348.37 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：80N450K6；Package：TO-220；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED Lighting Description This very high voltage N-channel Power MO

文件：270.05 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体