STD80N450K6

Marking：80N450K6；Package：DPAK；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDlighting Description ThisveryhighvoltageN-channelPowerMO

STD80N450K6

N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package; • Worldwide best RDS(on) x area \n• Worldwide best FOM (figure of merit) \n• Ultra low gate charge \n• 100% avalanche tested \n• Zener-protected;

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.\n\n

STP80N450K6

N-channel800V,380mΩtyp.,10AMDmeshK6PowerMOSFETinaTO-220package

Features •WorldwidebestRDS(on)xarea •WorldwidebestFOM(figureofmerit) •Ultralowgatecharge •100avalanchetested •Zener-protected Applications •Flybackconverter •Adaptersfortablets,notebookandAIO •LEDLighting Description ThisveryhighvoltageN-channelPowerMO