丝印：80R1K2；Package：PG-SOT223；800V CoolMOS짧 P7 Power Transistor

文件：1.05 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2P7；Package：SMD；800V CoolMOSª P7 Power Device

Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD protection • Fully optimized portfolio

文件：1.81556 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2QZ；Package：TO-220F；800V 1.2Ω N-channel MOSFET

 Description MMF80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to

文件：1.33225 Mbytes 页数：10 Pages

MGCHIP

丝印：80R1K2P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

文件：955.13 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2P7；Package：PG-TO252-3；800V CoolMOS짧 P7 Power Transistor

文件：978.93 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2P7；Package：PG-TO220-3；800V CoolMOS짧 P7 Power Transistor

文件：974.26 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：968.53 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2P7；Package：PG-TO251-3；800V CoolMOS짧 P7 Power Transistor

文件：1.23403 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：80R1K2PB；Package：TO-220F；800V 1.2ohm N-channel MOSFET

文件：1.41589 Mbytes 页数：10 Pages

MGCHIP

丝印：80R1K2C；Package：TO-220F；800V Super-Junction Power MOSFET

文件：1.10198 Mbytes 页数：12 Pages

WUMC

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