丝印：80N340K6；Package：DPAK；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Powe

文件：347.7 Kbytes 页数：16 Pages

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丝印：80N340K6；Package：TO-220；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MO

文件：292.93 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体