丝印：80N03；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description Th e TF80P03 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimi

文件：3.79402 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

P-Ch MOSFET

文件：581.39 Kbytes 页数：5 Pages

WIINSOK

微硕半导体

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 80mΩ ID ‐3.5A Pb‐Free Lead Plating & Halogen Free

文件：211.45 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 85mΩ ID ‐3.6A Pb‐Free Lead Plating & Halogen Free

文件：198.33 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 85mΩ ID ‐3.6A Pb‐Free Lead Plating & Halogen Free

文件：199.18 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技