丝印：TF90N03；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF90N03 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON).This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize c

文件：5.27333 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：404.38 Kbytes 页数：8 Pages

WUMC

紫光国微

30V N-Channel Trench MOSFET(Preliminary)

Features  Trench Power Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：404.4 Kbytes 页数：8 Pages

WUMC

紫光国微

90A, 30V N-CHANNEL(D-S) POWER MOSFET

文件：231.77 Kbytes 页数：6 Pages

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