丝印：80N30；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features VDS =30V,ID =80A RDS(ON)

文件：323.36 Kbytes 页数：7 Pages

RECTRON

丽正国际

MOSFET

Rectron

丽正国际

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. ▼ Simple Drive Requ

文件：181 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

文件：243.73 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：238.51 Kbytes 页数：4 Pages

DACO

罡境电子