丝印：310N10F7；Package：TO-220；N-channel 100 V, 2.3 m廓 typ., 180 A STripFET??VII DeepGATE?? Power MOSFET in a TO-220 package

文件：824.74 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 100 V, 2.3 m廓 typ., 180 A STripFET??VII DeepGATE?? Power MOSFET in a TO-220 package

文件：824.74 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET uses advanced trench technology

文件：1.00324 Mbytes 页数：4 Pages

DOINGTER

杜因特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) =2.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.86 Kbytes 页数：2 Pages

ISC

无锡固电